Structure analysis of in-grown stacking faults and investigation of the cause for high reverse current of 4H-SiC Schottky Barrier Diode

摘要

Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type contained only a single SF formed by 1c of 8H poly-type and showed low reverse currents. The other type was accompanied with short SFs which consisted of 3C poly-type in addition to two SFs formed by lc of 8H poly-type and showed high reverse currents. SF formed by lc of 8H poly-type was not the cause of the high reverse current, and we speculate that the barrier height lowering at the short SF attributed to the high reverse currents of SBDs.