Measurement of the silicon resistivity at very high temperature with junction isolated van der Pauw structures

摘要

The limits of the traditional experiment approach to extract resistivity in junction-isolated samples are discussed basing both on physical simulations and on extensive experimental data. Several optimization criteria to design van der Pauw resistors and a related characterization procedure are proposed and experimentally validated in order to extend the extraction of the resistivity up to 500/spl deg/C.