Low-temperature Preparation of BaTiO_3 Thin film by MOD and Hydrothermal Treatment

摘要

BaTiO_3(BTO) thin films with perovskite structure have been prepared on Ti?Pt/Ti/SiO_2/Si substrate using a combined porcess of conventional MOD process and hydrothermal method. BTO thin films with polycrystalline structure are obbtained on silicon at low processing temperatures lower than 200 deg C. The film thickness ranged from 0.20 to 0.84umm. The structural and ferroelectric properties were investigated as a function of film thickness by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Raman Spectroscopy and ferroelectric test system. The film retains the tetragonal perovskite structure with the (100) preferred orientation perpendicular to the film surface independent of film thickness. With increasing of thickness, polarization and coercive field of BaTiO_3 thin film increased and shown the same trends.