Abstract: Commercial dynamic Random Access Memory (dRAM) chips can offer a simple approach for the detection of neutrons. Indeed, ionizing radiation induced errors in the stored data of these silicon based memory deices provided the foundation for a new type of generic radiation sensor with the potential of high spatial resolution. Experiments were carried out and a MOnte Carlo program has been used to examine the response of the dynamic memory structures by which the sensitivity of dRAMs to neutrons can be increased. The aim of this paper is to present recent results and to discuss the capabilities of such a neutron detecting deice. !9
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