Effect of high implantation temperatures on defect formation in 6H-SiC

摘要

This paper describes a TEM study of 6H-SiC after implantation with 40 keV aluminum ions within the range of implantation temperatures of 1100 deg C to 1800 deg C. At high implantation temperatures, TEM showed that aluminum precipitates associated with interstitial half-loops are present in a damaged layer. Defects referred to as end of range (EOR) damage form below the region containing the precipitates. With increasing temperature, the EOR defects evolve from loop nuclei exhibiting strain-contrast to elongated dislocation loops lying on the (0001) basal plane.