Dependence of electron-hole generation function on EBIC contrast of defects

摘要

Nowadays, phenomenological modelling of electron-beam-induced current (EBIC) contrast from defects is well developed. But, as recently revealed by Araujo et al. (1994) and Bonard et al. (1996), the electron-hole pairs (e-h) generation function g(x,y,z) is still an open task. Obviously, the lack of information about g(x,y,z) results in a loss of EBIC quantitative potential. In this connection, we present here an expression for energy transfer dE/dS that realizes the recently published experimental e-h distributions. It will be applied by the Monte Carlo method to estimate the e-h generation. Solving the modified minority-carrier diffusion equation we obtain the EBIC contrast linescans profiles from localized defects. These calculations are confronted with the predictions from the Rutherford-Bethe physical frame. This new formulation of energy transference explains actual discrepancies between EBIC contrast data and theoretical predictions.