TEM observation of degraded InGaAsP MQW laser diodes

摘要

We observed three types of degradation in InGaAsP graded-index separate-confinement-heterostructure multiple quantum well laser diodes using cross-sectional and plan-view transmission electron microscopy. The first case is rapid degradation of ridge waveguide lasers due to oxidation of an exposed active region. The second case is rapid degradation of buried heterostructure lasers due to a climb motion of perfect dislocation half loops. The third is gradual degradation of buried heterostructure lasers due to generation of dislocation microloops at confinement/blocking interfaces for a long operation time.