Development of gallium-doped silicon 128x192 element arrays for 8-14um observation

摘要

Abstract: New gallium-doped silicon 128 $MUL 192 element arrayshave been achieved at CEA-LETI-LIR (InfraredLaboratory) for imaging in the 8 - 14 $mu@m spectralrange. This program is in keeping with the previousdetector developments for the ISOCAM camera (32 $MUL 32element arrays) and for ground-based observations (64$MUL 64 element arrays). The main features of the newdetectors are: a pitch of 75 $mu@m which leads to 10$MUL 15 mm$+2$/ chip dimensions, two selectable storagecapacities (respectively 0.1 and 0.5 pF), a DVR readoutcircuit achieved in an NMOS silicon line with 1.5 $mu@mdesign rules. The main electro-optical performances arethe following: a peak responsivity of 4.0 A/W, a noiseof 58 fArms over the 0.1 - 128 Hz spectral band whichis very close to the BLIP noise, and a correspondingnoise equivalent power of 1.4 10$+$MIN@14$/ W. !0