High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth

机译：通过Co或Fe离子注入和LPE再生长获得的InP中的高电阻层

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The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 10/sup 7/ Omega -cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm/sup 2/ at critical voltage.

机译：讨论了通过Co或Fe离子注入以及随后的外延再生长来获得InP中半绝缘掩埋层的可能性。 Fe和Co注入的InP的电特性测量表明，电阻率超过2.5伏的10 / sup 7 /Ω-cm临界电压，并且在临界电压下的电流密度低至20 mA / cm / sup 2 /。

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《Indium Phosphide and Related Materials, 1991., Third International Conference.》|1991年|P.500-503|共4页
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Vidimari; F.; Pellegrino; S.;
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中图分类无线电电子学、电信技术;
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专利

1. Effect of holmium addition during LPE growth on the properties of InP and GaInAsP layers [J] . O.Prochazkova, J.Zavakil, K.Zdansky Czechoslovak Journal of Physics . 1997,第7期

机译：LPE生长过程中添加addition对InP和GaInAsP层性能的影响
2. Ion-implanted planar pin diodes in InP/GaInAs layers grown on implanted InP:Fe [J] . Haussler W., Romer D. Electronics Letters . 1989,第17期

机译：在注入的InP：Fe上生长的InP / GaInAs层中注入离子的平面pin二极管
3. LPE growth of InP layers from rare-earth treated melts for radiation detector structures [J] . J. Grym, O. Prochazkova, J. Zavadil, Materials Science and Engineering . 2009,第1a2期

机译：稀土处理过的熔体在InP层中的LPE生长，用于辐射探测器结构
4. High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth [C] . Vidimari F., Pellegrino S., Institute of Electric and Electronic Engineer International Conference: Indium Phosphide and Related Materials . 1991

机译：通过CO或Fe离子植入和LPE再生获得的INP中的高电阻率层
5. Investigation of the effects of solution additives on nucleation and growth during copper electrodeposition onto resistive ruthenium barrier layers [D] . Younker, Jennifer Lauren 2008

机译：溶液添加剂对电阻钌阻挡层上铜电沉积过程中成核和生长的影响的研究
6. Effective Surface Passivation of InP Nanowires byAtomic-Layer-Deposited Al2O3 with POx Interlayer [O] . L. E. Black, *, A. Cavalli, -1

机译：InP纳米线的有效表面钝化带有POx夹层的原子层沉积Al2O3
7. Fully ion-implanted InP JFET with buried p-layer [O] . S.J. Kim, J. Jeong, G.P. Vella-Coleiro, 1990

机译：用埋地球员完全离子植入JFET
8. High-Resistivity Layers in n-InP Produced by Fe Ion Implantation. [R] . Donnelly, J. P., Hurwitz, C. E. 1977

机译：Fe离子注入制备n-Inp的高电阻率层。

High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth

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