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Multilayer Silicon Nitride Based Coupler Integrated into a Silicon Photonics Platform with 0.5 dB Coupling Loss between Standard SMF and the As-Diced Chip Edge Facet

机译:集成到硅光子平台中的基于氮化硅的多层耦合器,在标准SMF和切成芯片的芯片边缘小平面之间具有0.5 dB的耦合损耗

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摘要

We experimentally demonstrate <0.5 dB coupling loss with <0.3 dB variation over the O-band for both polarizations between an integrated silicon photonics platform with an as-diced edge facet and butt-coupled standard single mode fiber.
机译:我们通过实验证明了,在具有带切边端面的集成硅光子平台和对接耦合的标准单模光纤之间的两种偏振情况下,O波段上的耦合损耗均小于0.5 dB,而O波段的变化范围仅为0.3 dB。

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