220GHz GaAs Integrated Schottky Diode Mixer for Imaging System

摘要

In this paper, a wide band 220GHz sub-harmonic mixer based on GaAs integrated Schottky diode is proposed for future imaging system. The influence brought by manual assembly of the flip chip diodes is analyzed. And the integrated diode technology is applied to improve the consistency between the performance of each mixer in the multichannel imaging front-end and the integral performance of the imaging system. Simulated results show that within the band from 185GHz to 255 GHz, the conversion loss of the mixer is less than 9dB, and the DSB noise temperature is less than 900K.