A single GaN HEMT oscillator with four-path inductors

摘要

This letter proposes a single GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology. The oscillator consists of a HEMT amplifier with an LC feedback network. The inductor uses four-path inductor with high Q-factor. With the supply voltage of V_DD= 2 V, the GaN VCO current and power consumption of the oscillator are 10.8 mA and 21.6mW, respectively. The oscillator can generate single-ended signal at 8.82 GHz and it also supplies output power 1.24 dBm. At 1MHz frequency offset from the carrier the phase noise is -124.95 dBc/Hz. The die area of the GaN HEMT oscillator is 2×1 mm^2.