A compact GaN Bi-directional switching diode with a GaN Bi-directional power switch and an Isolated gate driver

摘要

A compact and fast GaN bi-directional switching diode is described, which is integrated with a GaN/Si bi-directional power switch and a Drive-by-Microwave (DBM) isolated gate driver using a microwave wireless power transfer. The fabricated 600V 15A GaN bi-directional switching diode exhibits its low Ron of 160 mΩ under 85 °C ambient temperature without an external heat sink. The compact 12mm × 25.5mm × 3mm module also has a cooling pad to directly release heat from the GaN bi-directional power switch. By the fabricated module, the 1.0 MHz fast current direction switching was successfully realized with constant low power consumption of 0.8W thank to a gate power sharing technic by the DBM gate driver.