Monte Carlo simulation and modeling of ion implantation induced contamination profiles

摘要

Dynamic TRIM Monte Carlo simulation, which can handle both the sputtering of contaminants from the wafer surface as well as recoil implantation of contaminants into the wafer, was used for the evaluation of the ion implantation induced contamination distribution. Al contamination depth profiles, formed during As, P or B implantation, respectively, were simulated and discussed. Based on considerations of collision kinematics of the implanted ion species' impacts leading to recoil implantation of the contaminants, an analytical model was developed that also takes the sputtering of the wafer surface into account. This analytical model, whose parameters were obtained from the MC simulation data, allows a fast and easy prediction of contamination profiles.