Silicon based GeSn p-i-n photodetector with longwave cutoff at 2.3 μm

摘要

We reported an investigation of Si-based p-i-n photodetectors with a Ge0.92Sn0.08 active layer grown by molecular beam epitaxy on n-type Si (100) substrate. The spectral response at zero bias shows the cutoff wavelength extends to 2300nm. This work represents a promising technology to develop Si-based photodiodes for short-wave infrared detection.