Evaluation of Primary-Side-Regulated and Secondary-Side-Regulated High-Insulated Gate Drive Power Supply for 10-kV SiC MOSFET

摘要

The fast development of the 10-kV SiC MOSFET demands for high-insulated gate drive power supply (GDPS) with low inter-winding-capacitance, low load-regulation-rate, and high conversion-efficiency. This paper presents a comparative study of primary-side-regulated (PSR) and secondary-side-regulated (SSR) GDPS for 10-kV SiC MOSFETs. Design considerations, including high-insulated transformer design, output voltage regulation scheme, and control IC selection, are evaluated. To verify the theoretical analysis, two types of GDPSs are fabricated and tested in the lab, and the experimental results show that the PSR GDPS has better performance because of lower inter-winding-capacitance, lower load-regulation-rate, and higher conversion efficiency.