首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems >Development of a no-back-plate SOI MEMS condenser microphone
【24h】

Development of a no-back-plate SOI MEMS condenser microphone

机译:开发无背板SOI MEMS电容式麦克风

获取原文

摘要

This study demonstrates a SOI condenser MEMS microphone consisting of planar interdigitated sensing electrodes, deformable diaphragm, and back chamber. No back-plate is required for this design, thus, the acoustic impedance is reduced. The merits of this study are: (1) the back-plate is replaced by planar interdigitated sensing electrodes to prevent in-use pull-in and process stiction between diaphragm and back-plate, (2) out-of-plane area-changing capacitive sensing provides a better linearity to sound pressure variation, (3) large and flat diaphragm implemented by SOI and DRIE process increases the acoustic sensitivity. The proposed microphone with 600µm diameter diaphragm and 42 pairs sensing electrodes is realized and tested. Measurements show a flat response between 1 kHz to 20 kHz. The sensitivity of microphone is −60.1dB (ref. 1V/1Pa) at 1 kHz.
机译:这项研究演示了一个SOI电容MEMS麦克风,该麦克风由平面叉指式感应电极,可变形膜片和后腔组成。此设计不需要背板,因此可以降低声阻抗。这项研究的优点是:(1)用平面叉指式感应电极代替背板,以防止隔膜和背板在使用中发生拉入和过程粘连;(2)改变面外面积电容感测为声压变化提供了更好的线性度,(3)通过SOI和DRIE工艺实现的大而平坦的振膜提高了声学灵敏度。所提议的具有600μm直径振膜和42对感应电极的传声器已经实现并经过测试。测量显示出1 kHz至20 kHz之间的平坦响应。麦克风的灵敏度在1 kHz时为-60.1dB(ref。1V / 1Pa)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号