MO CVD growth of ZnO with different growth rate

摘要

Low pressure apparatus combining N2O plasma, DEZn transported in argon and UV irradiation of the deposition zone has been used. ZnO layers were deposited on Si (100) and GaP (111) substrates. Best quality layers were deposited on Si substrates. Growth rate was changed in the range 2 to 90 µm/hour. Surface morphology at smaller growth rate was regular nanowalls type on both Si and GaP substrates. More complex morphology containing longer microrods and pyramids was obtained at high growth rate. Photoluminescence of the samples demonstrated improvement of the ZnO quality when the growth rate increased.