A threshold adaptive memristor model analysis with application in image storage

摘要

The memristor, known as the fourth circuit element was theoretically predicted by Chua in 1971 and has been realized practically in 2008. However, with the wide applications of memristors, conventional memristor models were suffered from more challenges such as practicality, accuracy and flexibility. This paper addresses an accurate and flexible Threshold Adaptive Memristor (TEAM) model derived from the recognized classical Simmons Tunnel Model, which takes the ions diffusion by Joule Heat effects into consideration. Concretely, TEAM crossbar circuits are applied both in binary and gray scale image storage with the improved control method. The results reveal the approach polishes up the efficiency of parallel processing in nonvolatile memristive image process.