High frequency compatibility of doped multilayer Graphene Nanoribbon in VLSI interconnect with respect to skin depth effect and layer width variation

摘要

In this research work, variation of skin depth in high frequency for undoped and doped multilayer Graphene Nanoribbon (GNR) is analyzed and compared with Cu as an interconnect material in VLSI fabrication process. Another acknowledgement of this skin depth for doped multilayer GNR is examined by varying the width of each GNR layer. After producing these simulations, homogeneity of variation of skin depth of doped multilayer GNR to Cu at high frequency has been introduced. Finally, doped multilayer GNR with relatively thicker layer width and maximum possible layers have been proposed as a better interconnect material.