Can bilayer black phosphorus outperform monolayer in field-effect transistors?

摘要

We have compared device performance of monolayer and bilayer BP FETs based on atomistic quantum transport simulations. This study reveals that, although monolayer BP FETs are robust against short-channel effects at L < 7 nm, bilayer BP FETs show better on-state performance at longer channel length (e.g., >10 nm) without losing steep switching characteristic. Our benchmark against ITRS 2022 shows that BP FETs are promising for the future high-performance logic devices.