Static and dynamic characteristics of InAs/AlGaInAs/InP quantum dot lasers operating at 1550 nm

摘要

With high modal gain InAs/AlGaInAs/InP quantum dot laser material short cavity ridge waveguide lasers were fabricated with cavity lengths down to 275 µm. These devices show new record values in direct digital signal modulation at 22 GBit/s. In addition also strong improvement are expected from this laser material in the static properties, in particular on the linewidth due to the suppression of the linewidth enhancement factor. First distributed feedback lasers on similar quantum dot laser material were processed and preliminary linewidth measurements indicate a significant linewidth reduction. Quantitative investigations are under way and will be presented at the conference.