Clarification of stress field measured by multi-wavelength micro-raman spectroscopy in the surrounding silicon of copper-filled through-silicon vias (tsvs)

摘要

Recently, micro-Raman spectroscopy has become popular in the near-surface silicon stress measurement around copper-filled through-silicon vias (TSVs). Since the stress σRaman measured by the micro-Raman spectroscopy is a combined result of all of the stress components, interpretation of this stress becomes obscure. Ryu et al. has claimed that σRaman is approximately biaxial and hence it is proportional to σr + σθ On the other hand, Wilson et al. has claimed that σr+σθ should be close to zero and hence σRaman is directly proportional to σz. In view of the dilemma as proposed by different research groups, this study aims to provide insight into the origin of this stress so that it can be understood and utilized properly.