Flexible InGaZnO (IGZO) thin-film transistor (TFT) with Al2O3 gate insulator (GI) which is deposited by low temperature (LT) atomic layer deposition (ALD) is proposed and its synaptic behavior and mechanical stability are demonstrated on a polyethylene terephthalate substrate. The change of threshold voltage under bending test is attributed to the generation of ionized oxygen vacancy resulting from the oxygen bond-breaking. In addition, the synaptic behavior is clearly observed and the convolutional neural network-based MNIST recognition rate of 87.2 % after 60,000 training is demonstrated by using the proposed IGZO TFTs. Stable synaptic behavior can be explained by the potentiation/depression pulse-dependent movement of hydrogens which the Al2O3 GI contains during LT ALD. Furthermore, it is found that the synaptic weight can be controlled and optimized by changing the thickness of Al2O3 GI.
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机译：柔性Ingazno（IGZO）薄膜晶体管（TFT）与Al 2 O. 3 提出了由低温（LT）原子层沉积（ALD）沉积的栅极绝缘体（GI），并在聚对苯二甲酸乙二醇酯基材上对其突触行为和机械稳定性进行说明。弯曲试验下的阈值电压的变化归因于由氧粘结引起的电离氧空位的产生。此外，通过使用所提出的IGZO TFT，清楚地观察到突触行为，并且基于卷积神经网络的基于神经网络的MNIST识别率为87.2％。稳定的突触行为可以通过AL的氢的增强/凹陷脉冲依赖性运动来解释 2 O. 3 Gi在LT ALD期间包含。此外，发现可以通过改变Al的厚度来控制和优化突触重量 2 O. 3 GI。
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