Improving the Forward Current of P-N Diode Using Soft X-ray Annealing Method

摘要

This paper presents a new result to improve the performance of P-N diode. The P-N diodes are fabrication using CMOS technology at TMEC. Electrical characteristics of P-N junction diode can be analyzed by current-voltage (I-V) measurement. This paper investigates X-ray irradiation by its electrical characteristics of difference X-ray exposure time. The X-ray energy use to expose 55 and 70 keV various time in the range 5-205 sec of exposure. After X-ray irradiation the forward current are increased about 3-4 orders. The series resistance and recombination lifetime are main factor for describe the change of forward current. Series resistance after X-ray irradiation with 55 and 70 keV are decreased from 10 kΩ to 5 Ω, which show that the device performance of diode are increased after X-ray irradiation. While the recombination lifetime are decreased from 55 to 48 μsec and 52 to 45 μsec at 55 and 70 keV, respectively. From the results show that soft X-ray annealing is very important to semiconductor industry.