Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

摘要

Power diodes development concentrate on fast switching, high reverse voltage blocking and low power consumption. One way to improve switching property is reducing minority carrier lifetime by electron irradiation. This paper presented degradation of silicon PN junction which cause from lifetime modification by electron irradiation. Silicon PIN power diodes were irradiated electron ray at different dose, 50, 100 and 150 KGy respectively, to compare with no treatment diodes. The result show that electron irradiation can reduce lifetime extremely but saturation current which effect to reverse leakage current will increase more than two orders when diodes were irradiated. JA-WD method shows that increasing in generation current via center traps of defects from irradiation is major reason of degradation in reverse leakage current and other electrical characteristics.