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Low Voltage Power Amplifier based on Nonoscale CMOS

机译:基于非尺度CMOS的低压功率放大器

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The low voltage power amplifier based on nanoscale CMOS has been designed and simulated in this paper. The power amplifier has designed by 2 stages cascade amplifier on 90 nm RF CMOS transistor. The first stage is the differential amplifier to amplify the signal between two inputs of the first amplifier and the second stage is the common drain amplifier to generate low power to power amplifier. This amplifier is designed for a smaller dimension due to CMOS technology. This power amplifier uses low voltage (1.5 V) to conserve the power consumption of amplifier. The output gain of this power amplifier is 23 dB at 2.45 GHz. The output power of this power amplifier is 34.3 dB at 2.45 GHz.
机译:本文设计和模拟了基于纳米级CMOS的低压功率放大器。功率放大器在90 nm rf CMOS晶体管上由2个级级联放大器设计。第一级是差分放大器,用于放大第一放大器的两个输入之间的信号,第二级是公共漏极放大器,以产生低功率的功率放大器。由于CMOS技术,该放大器设计用于较小的尺寸。该功率放大器使用低压(1.5 V)来节省放大器的功耗。该功率放大器的输出增益为23 dB,为2.45 GHz。该功率放大器的输出功率为34.3 DB,为2.45 GHz。

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