The Performance of Nanocrystalline CuInS_2/In_2S_3/SnO_2 Heterojunction Solar Cells Prepared by Chemical Spray Pyrolysis

摘要

Cu_xIn_2-_xS_3-_x thin films with various compositions were prepared by chemical spray pyrolysis to investigate Cu-In-S chalcopyrite semiconductor materials for photovoltaic applications. Nanocrystalline grains with sizes ranging from 30 to 80 nm were identified from XRD and SEM measurements. The CuInS_2/In_2S_3/SnO_2 heterojunction was formed to study photovoltaic effects with the sprayed Cu-chalcopyrite thin films. Best results of η=1.32%, V_(oc)=421 mV, J_(sc)=5.35 mA/cm~2 and FF=58.5% were found for solar cells with a Cu1.1Ino.9S_(1.9) absorber layer. Through analysis of the film and device parameters, factors that limited the photovoltaic performance are identified and discussed.