High Performance Inverter with a-IGZO-based Resistor Load and Self-Aligned Coplanar a-IGZO Driving TFT

摘要

We demonstrate an inverter implemented with a coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) driving thin-film transistor (TFT) and an a-IGZO-based resistor load. The inverter has larger voltage gain and wider swing range compared to inverters employing enhancement mode TFTs as load, making it applicable to high speed logic gates and other simple circuits.