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MScache: A Buffer Management Scheme Based on Page-Level Address Mapping for NAND-Flash SSD

机译:mscache:基于页面级地址映射的缓冲管理方案,适用于NAND-Flash SSD

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NAND Flash has been widely used in consumer electronic devices, especially in SSDs (Solid State Disks). However, with the process scaling down, its inherent imperfection will be more severe, such as the limited endurance, asymmetric speed of programming and read. While a traditional cache mechanism can improve the performance partly, it can't reduce the unnecessary writes to NAND Flash resulting from read miss; besides, it is still difficult for most current cache strategies to respond diverse patterns of access rapidly. In this paper, a novel Master and Slave Cache (MScache) based on page-level mapping and hybrid buffer management strategy is proposed to reduce the redundant writes to NAND Flash, improve access speed and prolong SSD's lifespan. We assess the scheme with three typical traces and three classical cache schemes are compared. The simulation results show that the proposed MScache can achieve dramatically writes and erases reduction.
机译:NAND Flash已广泛用于消费电子设备,尤其是SSD(固态盘)。然而,随着过程缩小的过程,其固有的缺陷将更严重,例如有限的耐力,编程的不对称速度和读取。虽然传统的缓存机制可以部分地改善性能,但它无法减少读错rease的NAND闪存的不必要写入;此外,大多数当前缓存策略仍然很难快速响应各种访问模式。在本文中,提出了一种基于页面级映射和混合缓冲区管理策略的新型主机和从站缓存(MSCache),以减少对NAND闪存的冗余写入,提高访问速度和延长SSD的寿命。我们评估具有三种典型迹线的方案,并比较了三种古典缓存方案。仿真结果表明,所提出的MSCACHE可以达到急剧写入和擦除减少。

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