We propose a new design of antireflection structures with the tips in the inverted pyramids, and we study numerically and experimentally the effects of the tips on the reflectance of crystalline silicon (c-Si). The light trapping properties of various antireflection structures are studied by the ray tracing method, and the short circuit current densities for different structures are also calculated in consideration of AM 1.5G solar spectra. The physical mechanism is proposed to explain the results, we study the light paths in these structures. We found that there are more chances of light reflecting between the surfaces of the tips and the inverted pyramids for the structures with lower reflections. The inverted pyramids with well-textured and suitable height tips have the lowest reflectance, and the incoming lights experiences from 2 to 5 times bounces on the front surface of the novel structures. Comparing to the inverted pyramid structures, both simulation and measurement results show that our structures have lower reflectance, and a 3% increasement of the short circuit current density is achieved. These results can provide a promising increase in solar cell efficiency in the current as well as the future generation solar cells.
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