首页> 外文会议>2011 5th International IEEE/EMBS Conference on Neural Engineering >Circuit topology comparison and design analysis for controllable pulse parameter transcranial magnetic stimulators
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Circuit topology comparison and design analysis for controllable pulse parameter transcranial magnetic stimulators

机译:可控脉冲参数经颅磁刺激仪的电路拓扑比较与设计分析

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摘要

We compare half-bridge and full-bridge circuit topologies for controllable pulse parameter transcranial magnetic stimulation (cTMS) devices. The full bridge can generate two more distinct coil voltage levels for enhanced pulse shaping, does not need an active snubber circuit, and requires lower semiconductor switch voltage ratings, at the cost of necessitating four semiconductor switches and associated drivers compared to two in the half bridge. In cTMS devices it may be beneficial to use coils with higher number of turns and, hence, higher inductance than that optimal in conventional TMS, since this reduces the required capacitance, stored energy, coil current, and, potentially, conduction losses and heating. However, increasing the number of coil turns raises the required capacitor voltage which presents practical limits on the number of turns, especially for very brief pulses.
机译:我们比较了可控脉冲参数经颅磁刺激(cTMS)设备的半桥和全桥电路拓扑。全桥可以产生两个不同的线圈电压电平,以增强脉冲整形,不需要有源缓冲电路,并且要求较低的半导体开关电压额定值,而与之相比,半桥中的两个则需要四个半导体开关和相关的驱动器。在cTMS设备中,使用匝数更多,因此电感比常规TMS最佳的线圈更高的线圈可能是有益的,因为这会减少所需的电容,存储的能量,线圈电流以及潜在的传导损耗和发热。然而,增加线圈匝数会增加所需的电容器电压,这对匝数提出了实际的限制,特别是对于非常短的脉冲而言。

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