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Electrical properties of Nb-doped and Nb-Mn-codoped BaTiO_3-(Bi_(0.5)Na_(0.5))TiO_3 lead-free PTCR ceramics

机译:Nb掺杂和Nb-Mn掺杂的BaTiO_3-(Bi_(0.5)Na_(0.5))TiO_3无铅PTCR陶瓷的电性能

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Nb-doped and Nb-Mn-codoped (l-xmol%)BaTiO_3-xmol%(Bi_(0.5)Na_(0.5))TiO_3 (BBNTx) lead-free positive temperature coefficient of resistivity (PTCR) ceramics were prepared by the conventional solid state reaction method. The XRD patterns indicated that all BBNTx samples formed a single perovskite structure with tetragonal phase. 0.25 mol% Nb doped BBNT1 ceramic, sintered at 1330°C for 1h in air, had low room-temperature resistivity (ρ_(25)) of 80 Ω·cm and a high resistivity jump (maximum resistivity [ρ_(max)]/minimum resistivity [pmin]) of 4.2 orders of magnitude with T_c about 152°C. The Nb-doped BBNTx (10≤x≤60) ceramics also showed distinct PTC effect with T_c between 185 and 232°C by sintering in N_2, which was shut off when samples were cooled to a low temperature. In addition, The Nb-Mn-codoped BBNT1 ceramics exhibited higher resistivity jump than the single Nb-doped ones, with increasing the room-temperature resistivity.
机译:通过常规方法制备了Nb掺杂和Nb-Mn掺杂的(l-xmol%)BaTiO_3-xmol%(Bi_(0.5)Na_(0.5))TiO_3(BBNTx)无铅正电阻率温度系数(PTCR)陶瓷固态反应法。 XRD图谱表明,所有BBNTx样品均形成具有四方相的单个钙钛矿结构。掺入0.25 mol%Nb的BBNT1陶瓷,在1330°C的空气中烧结1h,具有80Ω·cm的低室温电阻率(ρ_(25))和高电阻率跳变(最大电阻率[ρ_(max)] / T_c约为152°C时,最小电阻率(pmin)为4.2个数量级。通过在N_2中烧结,掺Nb的BBNTx(10≤x≤60)陶瓷也表现出明显的PTC效应,T_c在185至232°C之间,当样品冷却至低温时被关闭。此外,随着室温电阻率的增加,Nb-Mn掺杂的BBNT1陶瓷的电阻率跳跃性高于单个Nb掺杂的陶瓷。

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