Semiconductor detectors for the erytheme region of UV radiation

机译：紫外线辐射红斑区域的半导体探测器

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Abstract: Main parameters and characteristics of surface-barrier diodes sensitive for UV irradiation on the base of ZnSe are presented in the given paper. Possibilities of application of developed semiconductor photoreceivers for detectors of erytheme region are being discussed.!6

机译：摘要：本文介绍了对ZnSe基紫外线辐射敏感的表面势垒二极管的主要参数和特性。正在讨论将已开发的半导体光接收器用于红斑区域检测器的可能性。6

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《International conference on correlation optics》|1999年|p.617-618|共2页
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V.P. Makhniy; Chernivtsi State Univ.; Chernivtsi; Ukraine; Leonid P. Galchinetsky; Institute for Monocrystals; Kharkov; Ukraine; Vladimir D. Ryzhikov; Institute for Monocrystals; Kharkov; Ukraine.;
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中图分类物理学;
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1. Calibration of UV-Radiation Dose with Irradiation Time for CR-39 Track Detector by Using UV-visible Spectrophotometer [J] . Hussain A. Al-Jobouri, Mohamed Bechir Ben Hamida, Nada F. Tawfiq, American Journal of Modern Energy . 2015,第2期

机译：紫外可见分光光度计对CR-39轨道探测器紫外辐射剂量随时间的校正
2. UV radiation produced in a stack of thin plates and UV ring transition radiation detectors [J] . M.A. Aginian, L.A. Gevorgian, K.A. Ispirian, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2004,第1a2期

机译：一叠薄板和UV环形跃迁辐射探测器产生的UV辐射
3. SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS [J] . Victor P. Makhniy, V. V. Melnyk, Yu. V. Vorobiev Telecommunications and Radio Engineering . 2018,第19期

机译：基于宽带隙半导体的表面阻挡紫外探测器
4. Semiconductor detectors for the erytheme region of UV radiation [C] . V.P. Makhniy, Leonid P. Galchinetsky, Vladimir D. Ryzhikov International conference on correlation optics . 1999

机译：紫外线辐射红斑区域的半导体探测器
5. Ultrafast Time-Resolved Characterization of (Cadmium, Manganese)Tellurium Semiconductors as Radiation Detectors. [D] . Cross, Allen S. 2011

机译：超快时间分辨表征（镉，锰）碲半导体作为辐射探测器。
6. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts [O] . Gustavo A. Saenz, Goran Karapetrov, James Curtis, -1

机译：具有低肖特基势垒接触的紫外到红外悬浮金属-半导体-金属介观多层MoS2宽带探测器中的超高光响应性
7. Bibliography on Semiconductor Detectors. A compilation of selected literature abstracts as guide to recently public available R. D. publications in semiconductor radiation detector techniques covering the period 1963-1967. EUR 3630. [O] . Bock E. 1967

机译：半导体探测器参考书目。所选文献的汇编摘要作为最近公开可用的R.＆D出版物的指南，涉及1963年至1967年期间的半导体辐射探测器技术。 3630欧元。
8. Direct Writing of Regions of High Doping on Semiconductors by UV-Laser Photodeposition [R] . Ehrlich, D. J., Deutsch, T. E., Osgood, R. M. 1980

机译：用紫外激光光沉积直接写入半导体高掺杂区

Semiconductor detectors for the erytheme region of UV radiation

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