Possibilities of the GaAs_(0,6)P_(0,4)-electrolyte barrier for water photolysis

摘要

Hydrogen production from water photoysis using semiconductor-electrolyte barriers is highly perspective since only one energy transformation is involved. Several semiconductor-electrolyte interfaces have been characterized, including III-V compounds like GaAs, GaP and InP. Data has not been reported, though, for ternary solid solutions; particularly, GaAs_(0,6)P_(0.4). Its band-gap energy is 1.96 eV: suited for water photolysis and more efficient than GaP energy gap in using the solar specrum.