Amorphisation kinetics in ion-irradiated ceramics

摘要

We have investigated in detail the damage accumulation and amorphisation processes in covalently bound Si-based compounds like SiC, Si_3N_4 and SiO_2 during low temperature ion bombardment. By combining ion beam analysis techniques with X-ray absorption, Raman spectroscopy and mechanical surface profiling we have gained new insights into the fundamental mechanisms underlying the amorphisation process and into the evolution of the shrt range order at the crystalline-to-amorphous transition and after further ion bombardment at higher fluences. In the present paper, the main results of this study shall be summarised.