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Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistorelectric decoupling of cells

机译:具有自集成晶体管电去耦功能的自形成导电纳米结构上的非易失性电可重编程存储矩阵

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摘要

Self-formed conducting nanostructures are generated in "sandwich"-structures Si-SiO_2-W with an open surface of an insulating slit because of an electroforming and find out effects of switching and memory. Switching is carried out by voltage impulses of certain amplitude and duration. Shortcomings of the "diode" cell of memory based on such structures are discussed and design of the "transistor" cell for improvement of its characteristics is offered. In this design the structure of the bipolar transistor is formed by the introduction of an additional n~+-layer of silicon (emitter) so the memory element is integrated into the emitter. It has allowed to improve essentially all operational characteristics of a memory matrix: to reduce leakage currents; to increase breakdown voltage and so to increase recording speed due to using of faster switching process which requires higher voltage; to increase dimension of a matrix because of reduction of operating currents for silicon buses in inverse proportion to a transistor current gain; to increase stability of characteristics. Results of experimental samples tests of a memory matrix based on a "transistor" cell are presented.
机译:由于电铸,在具有绝缘缝隙开口表面的“三明治”结构Si-SiO_2-W中生成了自形成的导电纳米结构,并发现了开关和存储的效果。通过一定幅度和持续时间的电压脉冲进行切换。讨论了基于这种结构的存储器“二极管”单元的缺点,并提供了用于改善其特性的“晶体管”单元的设计。在这种设计中,双极晶体管的结构是通过引入一个额外的n +硅层(发射极)形成的,因此存储元件被集成到发射极中。它基本上可以改善存储矩阵的所有工作特性:减少泄漏电流;由于使用更快的开关过程需要更高的电压,因此增加了击穿电压,从而提高了记录速度;由于硅总线的工作电流的减小与晶体管电流增益成反比,从而增加了矩阵的尺寸;增加特性的稳定性。提出了基于“晶体管”单元的存储矩阵的实验样品测试结果。

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