Comprehensive numerical model for Phase-Change Memory simulations

摘要

A "multi-physics" numerical model that couples a detailed electrical description with the heat equation and with a microscopic picture of the phase transition dynamics is presented. This model, implemented in a three dimensional semiconductor device solver, correctly reproduces the electronic switching effect in the amorphous chalcogenide alloy and the phase-transitions dynamics, providing steady-state and transient simulation results in good agreement with experimental data.