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Improved modeling of Coulomb-enhanced and Urbach-broadened absorption edge of direct-gap semiconductors for band-parameter extraction

机译：用于带参数提取的直接隙半导体的库仑增强和Urbach扩展吸收边的改进模型

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An improved model for the Coulomb-enhanced and Urbach-broadened absorption spectrum that can be used to extract the band parameters for the band-edge region as well as to calculate the refractive index spectrum accurately.

机译：库仑增强和Urbach扩展吸收光谱的改进模型，可用于提取带边缘区域的带参数以及精确计算折射率光谱。

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《》|2007年|99-102|共4页
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Lin; E. Y.; Lay; T. S.; Chang; T. Y.;
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1. Accurate model including Coulomb-enhanced and Urbach-broadened absorption spectrum of direct-gap semiconductors [J] . E. Y. Lin, T. S. Lay, T. Y. Chang Journal of Applied Physics . 2007,第12期

机译：精确模型包括直接隙半导体的库仑增强和Urbach扩展的吸收光谱
2. POLARIZATION-RELATED PECULIARITIES OF LIGHT ABSORPTION SPECTRA IN DIRECT-GAP SEMICONDUCTORS WITH SCREW DISLOCATIONS NEAR THE FUNDAMENTAL ABSORPTION EDGE [J] . V. N. Khotyaintsev, M. A. Razumova, В. М. Хотягнцев, Украинский физический журнал: Науч. журн. . 2004,第10期

机译：基本间隙边缘附近具有螺旋位移的直接间隙半导体中光吸收光谱的极化相关性
3. Fundamental absorption edge of semiconductor alloys with the direct-gap energy-band structure [J] . Pikhtin A.N., Hegazy H.H. Semiconductors . 2009,第10期

机译：具有直接能隙能带结构的半导体合金的基本吸收边缘
4. Improved modeling of Coulomb-enhanced and Urbach-broadened absorption edge of direct-gap semiconductors for band-parameter extraction [C] . Lin E. Y., Lay T. S., Chang T. Y. International Conference on Indium Phosphide and Related Materials . 2007

机译：改进的Coulomb增强和Urbach-扩大的直接间隙半导体吸收边缘的建模，用于带参数提取
5. Multi-edge x-ray absorption spectroscopy and electronic structure calculations of biomimetic model complexes of the H-cluster of [iron-iron]-hydrogenase. [D] . Giles, Logan James. 2012

机译：[铁-铁]-加氢酶H簇的仿生模型复合物的多边缘x射线吸收光谱和电子结构计算。
6. The iron-site structure of Fe-hydrogenase and model systems: an X-ray absorption near edge spectroscopy study [O] . Marco Salomone-Stagni, Francesco Stellato, C. Matthew Whaley, -1

机译：的Fe和-hydrogenase模型系统的铁站点结构：邻近边缘光谱研究的X射线吸收
7. On the correctness of mathematical models of time-of-flight cathodoluminescence of direct-gap semiconductors [O] . Mikhail A. Stepovich, Dmitry V. Turtin, Elena V. Seregina, 2019

机译：关于直率间隙半导体的飞行时间阴极发光的数学模型的正确性
8. Refractive Index of Ternary and Quaternary Compound Semiconductors Below the Fundamental Absorption Edge: Linear and Nonlinear Effects [R] . Jensen, B., Torabi, A. 1983

机译：三元和四元复合半导体在基本吸收边缘以下的折射率：线性和非线性效应

Improved modeling of Coulomb-enhanced and Urbach-broadened absorption edge of direct-gap semiconductors for band-parameter extraction

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