Synchrotron Radiation X-ray Diffraction and X-ray Photoelectron Spectroscopy Investigation on Si-based Structures for Sub-Micron Si-IC Applications

摘要

Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy techniques have been employed for the investigation on Si-based layer structures for sub-micron Si-IC Applications. The high energy synchrotron radiation light sources have produced plenty of X-ray lines with high index diffraction and strong X-ray photoelectron emissions. The useful information will increase our understanding of these materials which are applied extensively to the semiconductor industry.