Simultaneous quality improvement of tunneling-and interpoly-oxides of nonvolatile memory devices by NH/sub 3/ and N/sub 2/O nitridation

摘要

In this paper, we found the nitridation on the interpoly-oxide with NH/sub 3/ and N/sub 2/O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown filed, charge to breakdown (Q/sub BD/) and trapping rate. The Q/sub BD/ of interpoly-oxide can be reached as high as 35 C/cm/sup 2/. This scheme is very promising for nonvolatile memory devices.