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Spurious suppression technique for edge-trap-type SAW resonators and their application to 1-GHz wide-band SAW-VCOs for mobile communications

机译:边缘陷波型声表面波谐振器的杂散抑制技术及其在移动通信的1 GHz宽带声表面波VCO中的应用

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1-GHz wide-band VCOs using SAW resonators have been successfully developed. A control-voltage sensitivity of over 5%/V has been achieved by using new edge-trap-type SAW-resonators. Optimizing the reflectors of SAW resonators is very effective for suppressing the spurious resonance of the Rayleigh wave in the oscillation band. Two types of VCOs are compared. One uses a Si bipolar junction transistor as a feedback amplifier and the other uses a GaAs MESFET. Both VCOs achieved a control-voltage sensitivity of over 5%/V and a phase noise of less than -107 dBc/Hz at a 25 kHz offset frequency from the carrier frequency. The GaAs MESFET VCO showed better phase noise performance than the Si transistor VCO at a 30-kHz or greater offset frequency. By changing the amplifier elements, it is possible to achieve the requirements for both local VCOs and transmission VCOs for wireless communication terminals.
机译:使用SAW谐振器的1-GHz宽带VCO已成功开发。通过使用新型的边沿陷阱型SAW谐振器,可实现超过5%/ V的控制电压灵敏度。优化SAW谐振器的反射器对于抑制振荡带中瑞利波的寄生谐振非常有效。比较了两种类型的VCO。一种使用Si双极结型晶体管作为反馈放大器,另一种使用GaAs MESFET。在距载波频率25 kHz的偏移频率下,两个VCO均实现了5%/ V以上的控制电压灵敏度和小于-107 dBc / Hz的相位噪声。在30 kHz或更高的失调频率下,GaAs MESFET VCO的相位噪声性能优于Si晶体管VCO。通过改变放大器元件,有可能达到对于无线通信终端的本地VCO和传输VCO的要求。

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