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The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

机译：使用Ta / sub 2 / O / sub 5 /栅氧化物的金属氧化物半导体场效应晶体管和门控二极管的制造与表征

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《》|2000年|P.353-356|共4页
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作者
Jing-Chi Yu; Benjamin Chihming Lai;
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中图分类无线电电子学、电信技术 ;
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1. Fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide [J] . Jing-Chi Yu, Lai B.C. IEEE Electron Device Letters . 2000 ,第11期

机译：使用Ta / sub 2 / O / sub 5 /栅氧化物的金属氧化物半导体场效应晶体管和门控二极管的制造与表征
2. Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain [J] . Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Applied Physics Letters . 2006 ,第7期

机译：具有超薄硅沟道和自对准源漏的垂直型双栅金属氧化物半导体场效应晶体管的制备与表征
3. Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors [J] . Meishoku Masahara, Yongxun Liu, Kenichi Ishii, Applied Physics Letters . 2005 ,第12期

机译：垂直型自对准非对称双栅金属氧化物半导体场效应晶体管的制备与表征
4. The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta{sub}2O{sub}5 gate oxide [C] . Jing-Chi Yu, Benjamin Chihming Lai, Joseph Ya-min Lee International Semiconducting and Insulating Materials Conference . 2000

机译：使用TA {Sub} 20×5栅极氧化物 - 氧化物半导体场效应晶体管的制造和表征金属氧化物 - 半导体场效应晶体管和门控二极管
5. Gate dielectric investigations of ultra-thin oxide and nitride /oxide stack for nanometer N- and P -channel metal-oxide-semiconductor field-effect-transistors [D] . Yee, Kam Fu 2000

机译：纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
6. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor [O] . K. Takase, Y. Ashikawa, G. Zhang, -1

机译：全方位栅InAs纳米线金属氧化物半导体场效应晶体管中的高度栅可调Rashba自旋轨道相互作用
7. Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide [O] . Singh, Vipul, Inokawa, Hiroshi, Endoh, Tetsuo, 2010

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8. Fabrication of n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with0.2 Micrometer Gate Lengths in 500 A Thin Film Silicon on Sapphire. (Reannouncement with New Availability Information) [R] . de la Houssaye, P. R., Offord, B. W., Minter, J. P., 1992

机译：在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。（重新公布新的可用性信息）

The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

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