A novel multi-channel field effect transistor (McFET) on bulk Si for high performance sub-80nm application

摘要

We demonstrate highly manufacturable double FinFET on bulk Si wafer, named multi-channel field effect transistor (McFET) for the high performance 80nm 144M SRAM. Twin fins are formed for each transistor using our newly developed simple process scheme. McFET with L/sub G/=80nm shows several excellent transistor characteristics, such as /spl sim/5 times higher drive current than planar MOSFET, ideal subthreshold swing of 60mV/dec, drain induced barrier lowering (DIBL) of 15mV/V without pocket implantation, and negligible body bias dependency, maintaining the same source/drain resistance as planar transistor due to the unique feature of McFET.