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Development of the equipment for precise measurement of optical radiation power in a spectral range of 1000-1600 nm

机译:开发用于精确测量1000-1600 nm光谱范围内的光辐射功率的设备

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At the Kharkiv State Research Institute of Metrology a trap-detector is designed. The silicon photodiodes S1337-1010 (spectral range of these photodiodes are from 400 up to 1000 nm). These photodiodes are produced in batches, and they are researched more closely in different research laboratories, and trap detectors are manufactured on this base, and become a basis of the measurement standards, created in Ukraine, in the field of a photometry. The package of the radiation laser sources is developed for comparisons by checking of the created trap-detectors with a cryogenic radiometer.
机译:在哈尔科夫州立计量研究所,设计了一个陷阱检测器。硅光电二极管S1337-1010(这些光电二极管的光谱范围从400到1000 nm)。这些光电二极管分批生产,并且在不同的研究实验室中进行了更深入的研究,并且在此基础上制造了陷阱检测器,并成为光度学领域在乌克兰制定的测量标准的基础。通过用低温辐射计检查创建的陷阱探测器,开发了用于比较的辐射激光源套件。

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