Design-oriented substrate noise coupling macromodels for heavily doped CMOS processes

摘要

Macromodels for substrate noise coupling in heavily doped substrates have been developed. These models are simple and express the substrate coupling directly as a function of the spacing between the injection and sensing contacts. The models require only six parameters that can be readily extracted from a few device simulations and measurements. The model is validated for a 2 /spl mu/m and a 0.5 /spl mu/m CMOS process where it is shown that the simple model predicts the noise coupling accurately.