Fully integrated embedded DRAM technologies with high performance logic and commodity DRAM cells for system-on-a-chip

摘要

This paper demonstrates a process integration for high performance and small footprint embedded DRAMs. A trench capacitor cell and a self-aligned bit line contact are selected to maintain exactly the same size as commodity DRAM cells. The cell array region is covered with a thin SiN barrier against salicidation. Ti-salicide source/drain is used in the logic region. No retention time degradation and good circuit performance are confirmed.