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GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics

机译:GaInP / GaAs HBT宽带单片互阻放大器及其高频小信号和大信号特性

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Monolithic broadband transimpedance amplifiers were developed using GaInP/GaAs single HBTs. The HBTs showed a cut off frequency (f/sub T/) of 60 GHz and maximum oscillation frequency (f/sub max/) of 100 GHz. The fabricated amplifiers had a maximum bandwidth of 19 GHz and an associated transimpedance gain of 47 dB/spl Omega/. The large signal characteristics of two transimpedance amplifier designs with similar gain were also investigated and showed that the cascode approach is much less sensitive to input power level.
机译:单片宽带跨阻放大器是使用GaInP / GaAs单HBT开发的。 HBT的截止频率(f / sub max /)为60 GHz,最大振荡频率(f / sub max /)为100 GHz。制成的放大器的最大带宽为19 GHz,相关的互阻抗增益为47 dB / spl Omega /。还研究了两种具有相似增益的互阻放大器设计的大信号特性,结果表明,共源共栅方法对输入功率电平的敏感度要低得多。

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