Dielectric properties of (Ba,Sr)TiO/sub 3/ thin films deposited on Ni/TiN/Si substrate by photo-assisted metal organic chemical vapor deposition

摘要

High dielectric strontium titanium oxide (STO) and barium strontium titanium oxide (BST) films have been deposited by photo-assisted metal organic chemical vapor deposition (PhAMOCVD) on Si(100) with Ni/TiN metallic buffer layers. The dielectric properties of capacitors based on the Ag/(Ba,Sr)TiO/sub 3//Ni/TiN/Si(100) heterostructure exhibited dielectric constants of from 300 to 600. Test structures of 3-D capacitors were fabricated using high permittivity MOCVD (Ba,Sr)TiO/sub 3/ thin films deposited on the sidewalls of 3-D Ni/TiN electrodes patterned by reactive ion etching.