Evaluation of 5500 V-class SI-thyristor as pulsed power switching device utilizing a low inductance testing circuit

摘要

Characterization of 5500 V-class reverse conducting SI-thyristors as a pulsed power switching device was examined utilizing a low inductance testing circuit. The testing circuit consisted of nineteen doorknob type ceramic capacitors with the total capacitance of 38 nF, and had a residual inductance of less than 13 nH. The SI-thyristor, tested in this report, was specially designed for pulsed power applications. When the anode voltage of 5 kV was applied, a discharge current rose up to 4.2 kA with dl/dt of 6.8/spl times/10/sup 10/ A/s, and the anode voltage fall time reached 62 ns. The comparison with conventionally designed SI-thyristors indicated the effectiveness of the new design.